MIT researchers developed a scalable superconducting nanowire memory array with a significantly lower error rate than previous designs. The 4×4 array uses nanowire loops with temperature-dependent switches and kinetic inductors to store data via magnetic flux. Operating at 1.3K, it achieves a bit error rate of 10⁻⁵ (1 error per

4m read timeFrom phys.org
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The team's nanowire-based superconducting memoryBringing superconducting memories closer to their practical use

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