Intel 18a and TSMC N2 processes use nanosheet transistors to shrink SRAM memory cirucits

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Intel and TSMC recently unveiled new SRAM technologies at the IEEE conference, achieving record memory densities with their latest nanosheet transistor architectures, Intel 18a and TSMC N2. Synopsys also revealed a design matching this density using the previous generation of transistors but at slower speeds. The innovations point to significant performance and efficiency improvements in future semiconductor designs.

Intel, Synopsys, TSMC All Unveil Record Memory Densities

Flexible transistors make smaller, better SRAM