An ultra-fast quantum tunneling device for the 6G terahertz era

Researchers at UNIST developed a terahertz quantum tunneling device that operates at one-quarter the electric field strength of previous designs by replacing aluminum oxide with titanium dioxide as the insulator material. The device uses quantum tunneling driven by terahertz waves for ultra-fast signal processing, addressing two critical challenges: high-voltage requirements and heat-induced damage to metal electrodes. Using atomic layer deposition techniques, the team achieved stable performance over 1,000 cycles with 60% terahertz wave modulation at 0.75 V/nm, compared to the 3 V/nm previously required. This breakthrough enables practical applications in 6G communications and quantum sensing by making terahertz quantum devices more durable and energy-efficient.