A research team affiliated with UNIST has unveiled a quantum device, capable of ultra-fast operation, a key step toward realizing technologies like 6G communications. This innovation overcomes a major hurdle that has long limited the durability of such devices under high electrical fields.

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Researchers at UNIST developed a terahertz quantum tunneling device that operates at one-quarter the electric field strength of previous designs by replacing aluminum oxide with titanium dioxide as the insulator material. The device uses quantum tunneling driven by terahertz waves for ultra-fast signal processing, addressing two critical challenges: high-voltage requirements and heat-induced damage to metal electrodes. Using atomic layer deposition techniques, the team achieved stable performance over 1,000 cycles with 60% terahertz wave modulation at 0.75 V/nm, compared to the 3 V/nm previously required. This breakthrough enables practical applications in 6G communications and quantum sensing by making terahertz quantum devices more durable and energy-efficient.

An ultra-fast quantum tunneling device for the 6G terahertz era

Innovative materials and fabrication techniques